Questions on the Article; Room-temperature continuous-wave operation of GaInNAs/GaAs quantum dot laser with GaAsN barrier grown by solid source molecular beam epitaxy

Number of Pages 6

This 6 page paper answers questions set by the student concerning the use with GaAsN barrier grown by solid source molecular beam epitaxy when used in quantum dot lasers. The bibliography cites 1 source.


File: TS14_TEquandot.rtf


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